note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: tr0115a doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / sft5926 _ _ _ _ = not screened tx = tx level txv = txv level s = s level /63 = to-63 sft5926/63 150v, 100 amp power transistor silicon npn 350 watts features: ? high frequency transistor with bvceo to 120 volts ? enhanced soa capability and fast switching ? high power dissipation: 350 watts ? 200c operating temperature ? replacement for 2n5926 ? tx, txv, s-level screening available 2 / - consult factory maximum ratings symbol value units collector ? emitter voltage v ceo 120 volts collector ? base voltage v cbo 150 volts emitter ? base voltage v ebo 10 volts collector current i c 100 amps base current i b 20 amps total device dissipation @ tc = 25oc derate above 25oc p d 350 2 w w/oc operating & storage temperature top & tstg -65 to +200 oc maximum thermal resistance junction to case r jc 0.5 oc/w notes: * pulse test: pulse width = 300sec, duty cycle = 2% 1 / for ordering information, price, operating curves, and availability contact factory. 2 / screening based on mil-prf-19500. screening flows available on request. 3 / unless otherwise specified, all electrical characteristics @25oc. to-63
note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: tr0115a doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sft5926/63 electrical characteristic 3 / symbol min max units collector ? emitter breakdown voltage* i c = 200ma bv ceo 120 - volts collector ? cutoff current v ce = 150v v ce = 100v, t c = 150c i ces - - 2 10 ma emitter ? cutoff current v eb = 10v i ebo - 1 ma dc current gain * v ce = 2v, i c = 20a v ce = 2v, i c = 50a v ce = 4v, i c = 90a v ce = 2v, i c = 50a, t a = -65c h fe 20 10 5 10 120 100 - - ?? collector ? emitter saturation voltage * i c = 50a, i b = 5a i c = 90a, i b = 18a v ce(sat) - - 0.6 1.5 volts base ? emitter voltage * i c = 50a, v ce = 2v i c = 90a, v ce = 4v v be(on) - - 1.5 2.5 volts common emitter small signal gain v ce = 10v, i c = 5a, f= 100khz h fe 5 20 ?? safe operating area v ce = 4v, i c = 50a,1s, t c = 25c v ce = 50v, i c = 1a,1s, t c = 25c v ce = 100v, i c = 0.5a,1s, t c = 25c so a 1 soa 2 soa 3 - - - - - - ?? on time v cc = 50v, v be1 = 11.2v r c = 1 ? , v be2 = 10v r b = 2 ? t on - - 7 sec storage time t s t f - - 4 6 sec fall time notes: 1. dimension does not include sealing flanges. 2. package contour optional within dimensions specified. 3. position of leads in relation to hexagon is not defined. pin assignment pin 1: emitter pin 2: base pin 3: collector to-63 2 3 .495 .460 .105 max 3x ? .105 .060 2 ? .775 .745 ? .875 .775 ? .313 .279 5/16-24 unf-2a .167 .090 .885 .855 1.030 .937 .515 .380 .300 max .515 .485 .260 .240 sitting plane 1 1 3 2
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